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User Friendly
Control PanelEasy to operate and control
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Flexible
Ion EnergyThat can be adjusted over
a wide range -
Ion Beam
EtchingHigh etch rate with precise
material removal
Easy to operate and control
That can be adjusted over
a wide range
High etch rate with precise
material removal
Configuration | Description |
Chamber Internal Dimension | 0.423 x 0.363 X 0.232 m |
Chamber Material | SUS304 |
Reactor Type | Anode Layer Ion Source |
Vacuum Range | 1 x 10- 5 Torr |
Etching Time | 3 - 10 mins (May vary for different shapes and sizes) |
Process Gas Type | Ar or O2 |
Power Supply | 3Ph (208 - 400V) ac + N + E (Voltage shall be catered to the respective country's requirements) |
Power Rating | 15 kW |
Extraction System | Rotary Vane Vacuum Pumps, Internationally-Rocognized Molecular Pumps |
Power Source | Ion Beam Power Source, Voltage Output: 0 - 2,000V (DC + Pulse) Bias Power Supply, Voltage Output 0 - 1,000 VDC Pulse, 40 kHz, Duty Cycle 20 - 80% |
System Dimension | ≈ 1.4 (L) x 1.1 (W) x 1.73 (H) m |
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